241. J. Kalb, F. Spaepen and M. Wuttig, "Atomic force microscopy measurements of crystal nucleation and growth rates in thin films of amorphous Te alloys", Applied Physics Letters 84:5240-5242 (2004).
237. J. Kalb, F. Spaepen and M. Wuttig, "Kinetics of crystal nucleation and growth in thin films of amorphous Te alloys measured by atomic force microscopy", Materials Research Society Symposia Procceedings (Pittsburgh, PA: Materials Research Society, 2004) 803:HH3.8.1-6.
229. P.G. Evans, O.D. Dubon, J.F. Chervinsky, M.J. Aziz, F. Spaepen and J.A. Golovchenko, "Growth and evaporation of Pb layers on As-terminated Si (111)", submitted to Journal of Applied Physics.
221. P.G. Evans, O.D. Dubon, J.F. Chervinsky, M.J. Aziz, F. Spaepen and J.A. Golovchenko, M.F. Chisholm, and D.A. Muller "Doping by metal-mediated epitaxy: growth of As delta-doped Si through a Pb monolayer", Applied Physics Letters, 78:1505 (2001).
215. O.D. Dubon, P.G. Evans, J.F. Chervinsky, F. Spaepen, M.J. Aziz and J.A. Golovchenko, "Low-temperature Si (111) homoepitaxy and doping mediated by a monolayer of Pb", Materials Research Society Symposium Proceedings (Pittsburgh, PA: Materials Research Society, 1999) Vol. 570, p.45-49.
208. P.G. Evans, O.D. Dubon, J.F. Chervinsky, F. Spaepen and J.A. Golovchenko, "Low temperature homoepitaxy of Si (111) using Pb overlayers", to be submitted to Applied Physics Letters. PDF Download
200. G.D. Wilk, J.F. Chervinsky, F. Spaepen and J.A. Golovchenko, "The effect of substrate miscut on low-temperature homoepitaxial growth on Si(111) mediated by overlayers of Au: Evidence of step flow," Applied Physics Letters, 70:2553-2555 (1997).
183. G.D. Wilk, R.E. Martinez, J.F. Chervinsky, F. Spaepen and J.A. Golovchenko, "Low-temperature homoepitaxial growth of Si on Si(111) mediated by thin overlayers of Au," Applied Physics Letters 65:866-868 (1994).
164. F. Spaepen, E. Nygren and A.V. Wagner, "Metal enhanced growth of silicon," in Crucial Issues in Semiconductor Materials and Processing Technologies, NATO ASI Series (Dordrecht: Kluwer, 1992) 222:483-499.
156. F. Xiong, E. Ganz, A.G. Loeser, J.A. Golovchenko, and F. Spaepen, "Liqiud-metal-mediated homoepitaxial film growth for Ge at low temperature," Applied Physics Letters 59:3586-88 (1991).
155. F. Xiong, J.A. Golovchenko, and F. Spaepen, "Homoepitaxial growth of crystalline Ge films through a liquid metal medium at low temperature," Materials Research Society Symposia Proceedings (Pittsburgh, PA: Materials Research Society, 1991) 204:265-270.
154. F. Xiong, E. Ganz, J.A. Golovchenko and F. Spaepen, "In situ RBS and channeling study of molecular beam epitaxial growth of metals and semiconductors on semiconductors Nuclear Instruments and Methods B56/57:780-784 (1991).